Efficient silicon light emitting diodes made by dislocation engineering

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 3-4, 2003, Pages 376-381

  Lourenco M A ^a   Siddiqui, M S A ^a   Gwilliam, R M ^a   Shao, G ^a   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Dislocation engineering; Electroluminescence; Erbium; Iron disilicide; Light emitting devices; Silicon

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; SEMICONDUCTING SILICON; ULSI CIRCUITS;

DISLOCATION ENGINEERING;

LIGHT EMITTING DIODES;

EID: 0037370391     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00690-2     Document Type: Conference Paper

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