Photoluminescence of GeSi structures grown on oxidized Si surfaces

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Shklyaev, A A ^a   Nobuki, S ^b   Uchida, S ^b   Nakamura, Y ^b   Ichikawa, M ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; LAYERED MANUFACTURING; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; STRESS RELAXATION; SURFACE STRUCTURE;

GESI LATTICE MISMATCH; GESI STRUCTURES; OXIDIZED SI SURFACES; PL INTENSITIES;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 33645526669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2189113     Document Type: Article

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