Interference induced oscillations in the tunneling current through ultrathin gate insulators

Journal of Applied Physics

Volumn 90, Issue 2, 2001, Pages 871-874

  Mohaidat, Jihad M ^a  

^a UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035878704     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379346     Document Type: Article

References (28)

1. K. H. Gundalich, Solid-State Electron. 9, 949 (1966).
2. J. Maserjian, J. Vac. Sci. Technol. 11, 996 (1974).
3. G. Petersson, C. Svensson, and J. Maserjian, Solid-State Electron. 18, 449 (1975).
4. G. Lewicki and J. Maserjian, J. Appl. Phys. 46, 3032 (1975).
5. M. V. Fischetti, D. J. Dimaria, L. Dori, J. Bately, E. Tierney, and J. Stasiak, Phys. Rev. B 35, 4404 (1987).
6. S. Zafar, Q. Liu, and E. A. Irene, J. Vac. Sci. Technol. A 13, 47 (1995).
7. S. Zafar, K. A. Conrad, Q. Liu, and E. A. Irene, Appl. Phys. Lett. 67, 1031 (1995).
8. L. Lai and E. A. Irene, J. Appl. Phys. 87, 1159 (2000).
9. E. Miranda, A. Faigon, and F. Campadal, Solid-State Electron. 41, 67 (1997).
10. R. Ludeke and H. J. Wen, Appl. Phys. Lett. 73, 1221 (1998).
11. T. Yoshida, D. Imafuku, J. L. Alay, S. Miyzaki, and M. Hirose, Jpn. J. Appl. Phys., Part 2 34, L903 (1995).
12. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982).
13. M. V. Fischetti, S. E. Laux, and E. Crabbe, J. Appl. Phys. 78, 1058 (1995). and references therein.
14. H. J. Hebert and E. A. Irene, J. Appl. Phys. 82, 291 (1997).
15. K. Sakakibara, N. Ajika, K. Eikyu, K. Ishikawa, and H. Miyoshi, IEEE Trans. Electron Devices 44, 1002 (1997).
16. Z. A. Weinberg and A. Harstein, Solid State Commun. 20, 179 (1976).
17. A. Harstein and Z. A. Weinberg, J. Phys. C 11, L469 (1978).
18. A. Harstein and Z. A. Weinberg, Phys. Rev. B 20, 1335 (1979).
19. C. Juang, K. J. Kuhn, and R. B. Darling, Phys. Rev. B 41, 12047 (1990).
20. A. Goldberg and H. Schey, Am. J. Phys. 35, 177 (1967).
21. H. Guo, K. Diff, G. Neofotistos, and J. Gunton, Appl. Phys. Lett. 53, 131 (1988).
22. K. Leo, J. Shah, E. Göbel, T. Damen, S. Schmitt, W. Schafer, and K. Köhler, Phys. Rev. Lett. 66, 201 (1991).
23. J. Mohaidat, K. Shum, and R. Alfano, Phys. Rev. B 45, 3822 (1992).
24. R. Pierret, Semiconductor Fundamentals (Addison-Wesley, Reading, MA, 1989), Chap. 2.
25. K. J. Hebert, S. Zafar, E. A. Irene, R. Kuehn, T. E. McCarthy, and E. K. Demirlioglu, Appl. Phys. Lett. 68, 266 (1996).
26. L. Mao, C. Tan, and M. Xu, Solid-State Electron. 44, 1501 (2000).
27. Y. Ando and T. Itoh, J. Appl. Phys. 61, 1497 (1987).
28. J. Maserjian and N. Zamani, J. Appl. Phys. 53, 559 (1982).