Optical properties of GaInNAs/GaAs quantum well structures

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4423-4426

  Zhao, Q X ^a   Willander, M ^a   Wang, S M ^b   Wei, Y Q ^b   Gu, Q F ^b   Sadeghi, M ^b   Larsson, A ^b  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Carrier localization; GaInNAs; Post growth annealing; Quantum well

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC STRUCTURE; HEAT TREATMENT; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

CARRIER LOCALIZATION; POST GROWTH ANNEALING; RADIATIVE RECOMBINATION; TRANSITION ENERGIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847061340     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.115     Document Type: Article

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