Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAsGaAs quantum well structures

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Zhao, Q X ^a   Wang, S M ^a   Wei, Y Q ^a   Sadeghi, M ^a   Larsson, A ^a   Willander, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; MAGNETIC RESONANCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS;

BAND-GAP SHIFTS; CARRIER LOCALIZATION; CLOSE CYCLE CRYOSTATS; DEEP LEVEL DEFECTS; ROOM TEMPERATURE (RT);

SEMICONDUCTOR QUANTUM WELLS;

EID: 17944366020     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1891271     Document Type: Article

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