High-quality GaNAsGaAs quantum wells with light emission up to 1.44 μm grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 87, Issue 14, 2005, Pages 1-3

  Wang, S M ^a   Gu, Q F ^a   Wei, Y Q ^a   Sadeghi, M ^a   Larsson, A ^a   Zhao, Q X ^b   Wang, X D ^c   Ma, C H ^c   Xing, Z G ^d  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

GROWTH RATE; WELL THICKNESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 28344456410     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2084337     Document Type: Article

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