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Volumn 91, Issue 8, 2002, Pages 4900-4903

Rapid thermal annealing of GaN xAs 1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

(5) Loke, W K a Yoon, S F a Wang, S Z a Ng, T K a Fan, W J a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; AS-GROWN; BLUE SHIFT; DYNAMICAL DIFFRACTION THEORY; EXPERIMENTAL CURVES; FULL WIDTH HALF MAXIMUM; GAAS(1 0 0); HIGH-RESOLUTION X-RAY DIFFRACTION; LOW TEMPERATURE PHOTOLUMINESCENCE; N CONTENT; NITROGEN ATOM; OUT-DIFFUSION; PL INTENSITY; PL SPECTRA; RADIO FREQUENCIES; RADIO FREQUENCY PLASMA; RED SHIFT; SOLID SOURCE MOLECULAR BEAM EPITAXY; THERMALLY STABLE; X RAY ROCKING CURVE;

CURVE FITTING; EPITAXIAL GROWTH; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 0037091706 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1454193 Document Type: Article

Times cited : (49)

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