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MRS Internet Journal of Nitride Semiconductor Research

Volumn 6, Issue , 2001, Pages

Room temperature ohmic contact on n-type GaN using plasma treatment

(4) Jang, Ho Won a Kim, Jong Kyu a Jeon, Chang Min a Lee, Jong Lam a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; PHOTOEMISSION; PLASMA APPLICATIONS; SPECTROSCOPIC ANALYSIS; SURFACE TREATMENT; SYNCHROTRON RADIATION; THERMAL EFFECTS;

ATOMIC RATIO; CONDUCTION BANDS; ELECTRON DONORS; PLASMA SURFACE TREATMENT;

OHMIC CONTACTS;

EID: 3242790986 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s109257830000020x Document Type: Article

Times cited : (6)

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