SCOPUS 정보 검색 플랫폼

Volumn 88, Issue 8, 2006, Pages

Improving work function tuning by preimplanting multiple dopants in Ni fully silicided gate

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; MULTIPLE DOPANTS; SILICIDED GATE; WORK FUNCTIONS;

DEGRADATION; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; NICKEL; SEMICONDUCTOR DOPING; SILICON;

LASER TUNING;

EID: 33644520585 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2178212 Document Type: Article

Times cited : (4)

References (11)

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