Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 574-577

  Suzuki, R ^a   Miyamoto, T ^a   Koyama, F ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. MOCVD; A3. Quantum dot; B1. GaAs; B1. GaInNAs; B1. InAs; B3. Semiconductor laser

Indexed keywords

COMPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

BUFFER LAYERS; DOT MORPHOLOGY; EMISSION WAVELENGTHS; WAVELENGTH ELONGATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846449130     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.174     Document Type: Article

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