InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 528-531

  Suzki, R ^a   Miyamoto, T ^a   Matsuura, T ^a   Koyama, F ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COALESCENCE; INDIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; BUFFER LAYERS; GALLIUM ALLOYS;

DISTRIBUTION UNIFORMITY; GANAS BUFFER; INAS QUANTUM DOTS; NITROGEN (N) COMPOSITIONS;

SEMICONDUCTOR QUANTUM DOTS; OPTICAL WAVEGUIDES;

DISTRIBUTION UNIFORMITY; GAAS; INAS QDS; INAS QUANTUM DOTS;

EID: 33646168482     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564111     Document Type: Conference Paper

References (3)

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