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Volumn 85, Issue 9, 2004, Pages 1469-1471
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Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CURRENT DENSITY;
DEGRADATION;
GROUND STATE;
IMAGE PROCESSING;
MOLECULAR BEAM EPITAXY;
OPTIMIZATION;
PHOTOLUMINESCENCE;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SELF ASSEMBLY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM DOTS;
TRANSMISSION ELECTRON MICROSCOPY;
EMISSION WAVELENGTH;
FULL-WIDTH AT HALF-MAXIMUM (FWHM);
OPTICAL QUALITY;
ROOM TEMPERATURE (RT);
QUANTUM WELL LASERS;
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EID: 4944242249
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1789236 Document Type: Article |
Times cited : (19)
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References (16)
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