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Volumn 85, Issue 9, 2004, Pages 1469-1471

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DEGRADATION; GROUND STATE; IMAGE PROCESSING; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 4944242249     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789236     Document Type: Article
Times cited : (19)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.