Growth, fabrication, and operating characteristics of ultra-low threshold current density 1.3 μm quantum dot lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2520-2522

  Ray, Sumon K ^a   Groom, Kristian M ^a   Hogg, Richard A ^a   Liu, Hui Yun ^a   Sellers, Ian R ^a   Hopkinson, Mark ^a   Badcock, Tom J ^a   Ramsay, Andrew J ^a   Mowbray, David J ^a   Skolnick, Maurice S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Gain saturation; Quantum dot laser; Ridge waveguide

Indexed keywords

CLADDING (COATING); ELECTRIC CURRENTS; ELECTRIC EXCITATION; ELECTRONIC STRUCTURE; ETCHING; HEAT SINKS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

GAIN SATURATION; QUANTUM DOT LASERS; RIDGE WAVEGUIDES;

CURRENT DENSITY;

EID: 21244480504     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2520     Document Type: Conference Paper

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