Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 20-23, 2006, Pages

  Suzuki, Ryoichiro ^a   Miyamoto, Tomoyuki ^a   Matsuura, Tetsuya ^a   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaAs; GalnNAs; InAs; MOCVD; Quantum dot; Semiconductor laser

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

GALNNAS; GANAS BUFFER LAYER; GROWTH TEMPERATURE; INAS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745290672     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L585     Document Type: Article

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