Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Mitchel, W C ^a   Mitchell, W D ^a   Landis, G ^b   Smith, H E ^b   Lee, Wonwoo ^c   Zvanut, M E ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^c UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC LEVELS; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION ENERGIES; VANADIUM ACCEPTOR LEVEL;

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; HALL EFFECT; INSULATING MATERIALS; LIGHT ABSORPTION; VANADIUM;

SILICON CARBIDE;

EID: 33846293651     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2407263     Document Type: Article

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