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Applied Physics Letters

Volumn 69, Issue 8, 1996, Pages 1113-1115

Formation of semi-insulating 6H-SiC layers by vanadium ion implantations

(5) Kimoto, T a Nakajima, T a Matsunami, H a Nakata, T b Inoue, M b

a KYOTO UNIVERSITY (Japan)

b Ion Eng Res Institute Corporation (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038634456 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117075 Document Type: Article

Times cited : (52)

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