Electrical and optical investigation of the position of vanadium related defects in the 4H and 6H SiC bandgaps

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 507-512

  Jenny, J R ^a   Skowronski, M ^a   Mitchel, W C ^a   Smith, S R ^a   Evwaraye, A O ^a   Hobgood, H M ^a   Augustine, G ^a   Hopkins, R H ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HALL EFFECT; IONIZATION OF SOLIDS; LIGHT ABSORPTION; LIGHT POLARIZATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; VANADIUM;

ELECTRONIC ABSORPTION BANDS; OPTICAL ADMITTANCE SPECTROSCOPY; VIBRATIONAL ABSORPTION BANDS;

SILICON CARBIDE;

EID: 0030383951     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-507     Document Type: Conference Paper

References (12)