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Volumn 57, Issue 19, 1998, Pages 12181-12196

Band-gap states of Ti, V, and Cr in-SiC: Identification and characterization by elemental transmutation of radioactive isotopes

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EID: 0000685220     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.12181     Document Type: Article
Times cited : (59)

References (60)
  • 6
    • 0003597031 scopus 로고
    • Properties of Silicon Carbide, edited by G. L. Harris, Emis Data Review Series No. 13 (INSPEC, London, 1995).
    • (1995) Properties of Silicon Carbide
  • 10
    • 0030652612 scopus 로고    scopus 로고
    • A short review about radiotracer work in semiconductors can be found in N. Achtziger, Mater. Sci. Forum 248-249, 113 (1997).
    • (1997) Mater. Sci. Forum , vol.248-249 , pp. 113
    • Achtziger, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.