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Volumn 264-268, Issue PART 1, 1998, Pages 545-548

Deep levels in SiC:V by high temperature transport measurements

(13) Mitchel, W C a Perrin, R a Goldstein, J a Roth, M a,d Ahoujja, M a Smith, S R a Evwaraye, A O b Solomon, J S a Landis, G a Jenny, J a Hobgood, H McD c,e Augustine, G c Balakrishna, V c

a AIR FORCE RESEARCH LABORATORY (United States)

b UNIVERSITY OF DAYTON (United States)

c NORTHROP GRUMMAN CORPORATION (United States)

d Sterling Semiconductor (United States)

e Arkansas Power Electronics International Inc (United States)

Author keywords

Hall Effect; Semi Insulating Material; Vanadium Doping

Indexed keywords

ACTIVATION ENERGY; CHARGE TRANSFER; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HALL EFFECT; IONIZATION OF SOLIDS; LIGHT ABSORPTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; VANADIUM;

THERMAL IONIZATION;

SILICON CARBIDE;

EID: 0001654656 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.545 Document Type: Article

Times cited : (16)

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- Evwaraye, A.O.¹ Smith, S.R.² Mitchel, W.C.³

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