Evaluating and improving SIMS method for measuring nitrogen in SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 617-620

  Smith, Howard E ^a,b   Eyink, Kurt G ^a   Mitchel, William C ^a   Wood, Mark C ^c   Fanton, Mark A ^d  

^a WRIGHT PATTERSON AIR FORCE BASE   (United States)

^b UNIVERSITY OF DAYTON   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Detection limit; n type; Nitrogen; Secondary ion mass spectrometry; SIMS

Indexed keywords

ADSORPTION; IONIZATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY;

CURRENT CHANGING PROCEDURE; DATA POINT RASTER CHANGING PROCEDURE; DETECTION LIMIT;

SILICON CARBIDE;

EID: 33846271626     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.617     Document Type: Conference Paper

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