Shallow and deep levels in n-type 4H-SiC

Journal of Applied Physics

Volumn 79, Issue 10, 1996, Pages 7726-7730

  Evwaraye, A O ^a,b   Smith, S R ^a,c   Mitchel, W C ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000240103     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362376     Document Type: Article

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