Band gap states of V and Cr in 6H-silicon carbide

Applied Physics A: Materials Science and Processing

Volumn 65, Issue 3, 1997, Pages 329-331

  Achtziger, N ^a   Grillenberger, J ^a   Witthuhn, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; DEEP LEVEL TRANSIENT SPECTROSCOPY; RADIOISOTOPES; SILICON CARBIDE; TITANIUM; VANADIUM;

CONDUCTION BAND EDGE; ELEMENTAL ISOTOPE TRANSMUTATION;

ENERGY GAP;

EID: 0031234669     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050587     Document Type: Article

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