Microstructure and dielectric properties of La 2 O 3 doped amorphous SiO 2 films as gate dielectric material

Applied Surface Science

Volumn 253, Issue 7, 2007, Pages 3731-3735

  Shi, L ^a   Yuan, Y ^a   Liang, X F ^a   Xia, Y D ^a   Yin, J ^a   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Gate dielectric; High k; La 2 O 3 doped SiO 2; PLD

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; MICROSTRUCTURE; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICA;

GATE DIELECTRIC; HIGH-K; INTERFACIAL LAYER; INTERFACIAL REACTION;

AMORPHOUS FILMS;

EID: 33846292928     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.08.006     Document Type: Article

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