메뉴 건너뛰기




Volumn 47, Issue 3, 2000, Pages 529-536

Numerical simulation of neutron radiation effects in avalanche photodiodes

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; NEUTRONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; STATISTICS;

EID: 0033877344     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824722     Document Type: Article
Times cited : (9)

References (24)
  • 1
    • 0031991607 scopus 로고    scopus 로고
    • The CMS electromagnetic calorimeter, vol. 61B, pp. 52-58, Feb. 1998.
    • F. Nessi-Tedaldi, "The CMS electromagnetic calorimeter," Nucl. Phys. B (Proc. Suppl.), vol. 61B, pp. 52-58, Feb. 1998.
    • Nucl. Phys. B (Proc. Suppl.)
    • Nessi-Tedaldi, F.1
  • 2
    • 0031100552 scopus 로고    scopus 로고
    • Avalanche photodiodes for particle detection, vol. 387, pp. 186-193, 1997. For example see.
    • J. P. Pansart, "Avalanche photodiodes for particle detection," Nucl. Instrum. Meth. A, vol. 387, pp. 186-193, 1997. For example see.
    • Nucl. Instrum. Meth. a
    • Pansart, J.P.1
  • 3
    • 0031099882 scopus 로고    scopus 로고
    • et al, Wavelength dependence of avalanche photodiode (APD) parameters, vol. 387, pp. 202-204, 1997.
    • T. Kirn et al, "Wavelength dependence of avalanche photodiode (APD) parameters," Nucl. Instrum. Meth. A. vol. 387, pp. 202-204, 1997.
    • Nucl. Instrum. Meth. A.
    • Kirn, T.1
  • 4
    • 0032685865 scopus 로고    scopus 로고
    • Characterisation of avalanche photodiodes for calorimetry applications, vol. 428, pp. 413-431, 1999.
    • A. Karar, Y. Musienko, and J. C. Vanel, "Characterisation of avalanche photodiodes for calorimetry applications," Nucl. Instr. Meth. A, vol. 428, pp. 413-431, 1999.
    • Nucl. Instr. Meth. a
    • Karar, A.1    Musienko, Y.2    Vanel, J.C.3
  • 5
    • 33749881849 scopus 로고    scopus 로고
    • A short wavelength selective reach through avalanche photodiode, vol. 34, p. 1362-, June 1996.
    • R. J. Mclntyre, P. P. Webb, and H. Dautet, "A short wavelength selective reach through avalanche photodiode," IEEE Trans. Nucl. Sci., vol. 34, p. 1362-, June 1996.
    • IEEE Trans. Nucl. Sci.
    • Mclntyre, R.J.1    Webb, P.P.2    Dautet, H.3
  • 9
    • 0009667182 scopus 로고    scopus 로고
    • Temperature dependence of avalanche multiplication in semiconductors, vol. 9, pp. 242-244, 1966.
    • C. R. Crowell and S. M. Sze, "Temperature dependence of avalanche multiplication in semiconductors," Appt. Phys. Lett., vol. 9, pp. 242-244, 1966.
    • Appt. Phys. Lett.
    • Crowell, C.R.1    Sze, S.M.2
  • 10
    • 0001376374 scopus 로고    scopus 로고
    • Distribution junctions and ionization rates for hot electrons in semiconductors, vol. 128, pp. 2507-2517, 1962.
    • G. A. Baraff, "Distribution junctions and ionization rates for hot electrons in semiconductors," Phys. Rev., vol. 128, pp. 2507-2517, 1962.
    • Phys. Rev.
    • Baraff, G.A.1
  • 11
    • 84892234147 scopus 로고    scopus 로고
    • An improved fit to Baraff s universal curves for the ionization coefficients of electron and hole multiplication in semiconductors, 27, pp. 1299-1301, July 1980.
    • A. D. Sutherland, "An improved fit to Baraff s universal curves for the ionization coefficients of electron and hole multiplication in semiconductors," IEEE Trans. Electron Devices, Vol. ED27, pp. 1299-1301, July 1980.
    • IEEE Trans. Electron Devices, Vol. ED
    • Sutherland, A.D.1
  • 12
    • 36149009998 scopus 로고    scopus 로고
    • et al., Ionization rates of electrons and holes in silicon, vol. 134, pp. A761-A773, 1964.
    • C. A. Lee and R. A. Logan et al., "Ionization rates of electrons and holes in silicon," Phys. Rev., vol. 134, pp. A761-A773, 1964.
    • Phys. Rev.
    • Lee, C.A.1    Logan, R.A.2
  • 13
    • 0015956781 scopus 로고    scopus 로고
    • Temperature effects in silicon avalanche photodiodes, vol. 17, pp. 705-718, 1974.
    • J. Conradi, "Temperature effects in silicon avalanche photodiodes," Solid-State Electron., vol. 17, pp. 705-718, 1974.
    • Solid-State Electron.
    • Conradi, J.1
  • 15
    • 36149015973 scopus 로고    scopus 로고
    • Intrinsic optical absorption in single crystal germanium and silicon at 77 K and 300 K, vol. 99, pp. 1151-1157, 1955.
    • W. C. Dash and R. Newman, "Intrinsic optical absorption in single crystal germanium and silicon at 77 K and 300 K," Phys. Rev., vol. 99, pp. 1151-1157, 1955.
    • Phys. Rev.
    • Dash, W.C.1    Newman, R.2
  • 16
    • 0030216335 scopus 로고    scopus 로고
    • The effect of radiation induced defects on the performance of high resistivity silicon diodes, vol. 377, pp. 224-227, 1996.
    • J. Matheson, M. S. Robbins, and S. J. Watts, "The effect of radiation induced defects on the performance of high resistivity silicon diodes," Nucl. Instrum. Meth. A, vol. 377, pp. 224-227, 1996.
    • Nucl. Instrum. Meth. a
    • Matheson, J.1    Robbins, M.S.2    Watts, S.J.3
  • 17
    • 0030372719 scopus 로고    scopus 로고
    • etal., Anew model for generation-recombination in silicon depletion regions after neutron irradiation, vol. 43, pp. 2587-2594, Dec. 1996.
    • S. J. Watts etal., "Anew model for generation-recombination in silicon depletion regions after neutron irradiation," IEEE Trans. Nucl. Sci., vol. 43, pp. 2587-2594, Dec. 1996.
    • IEEE Trans. Nucl. Sci.
    • Watts, S.J.1
  • 18
    • 0001478514 scopus 로고    scopus 로고
    • Bulk damage effects in irradiated silicon detectors due to clustered divacancies, vol. 82, pp. 126-136, July 1997.
    • K. Gill, "Bulk damage effects in irradiated silicon detectors due to clustered divacancies," J. Appl. Phys., vol. 82, pp. 126-136, July 1997.
    • J. Appl. Phys.
    • Gill, K.1
  • 19
    • 33749921828 scopus 로고    scopus 로고
    • et al., Electrical properties and charge collection efficiency for neutron irradiated P-type and JV-type Si detectors, vol. 32, pp. 41524, May 1993.
    • F. Lemeilleur et al., "Electrical properties and charge collection efficiency for neutron irradiated P-type and JV-type Si detectors," Nucl. Phys. B (Proc. Suppl.), vol. 32, pp. 41524, May 1993.
    • Nucl. Phys. B (Proc. Suppl.)
    • Lemeilleur, F.1
  • 20
    • 0030108025 scopus 로고    scopus 로고
    • et al., A microscopic explanation for type in version and the annealing behavior of radiation damaged silicon detectors, vol. 371, pp. 575-577, 1996.
    • J. Matheson et al., "A microscopic explanation for type in version and the annealing behavior of radiation damaged silicon detectors," Nucl. Instrum. Meth. A, vol. 371, pp. 575-577, 1996.
    • Nucl. Instrum. Meth. a
    • Matheson, J.1
  • 21
    • 0030149546 scopus 로고    scopus 로고
    • Defect evolution in irradiated silicon detector material, vol. 374, pp. 12-26, 1996.
    • B. C. MacEvoy, G. Hall, and K. Gill, "Defect evolution in irradiated silicon detector material," Nucl. Instrum. Meth. A, vol. 374, pp. 12-26, 1996.
    • Nucl. Instrum. Meth. a
    • MacEvoy, B.C.1    Hall, G.2    Gill, K.3
  • 22
    • 0009714374 scopus 로고    scopus 로고
    • A two level model for lifetime reduction processes in neutron irradiated silicon and germanium, vol. 14, pp. 88-102, Dec. 1967.
    • G. Messenger, "A two level model for lifetime reduction processes in neutron irradiated silicon and germanium," IEEE Trans. Nucl. Sci., vol. 14, pp. 88-102, Dec. 1967.
    • IEEE Trans. Nucl. Sci.
    • Messenger, G.1
  • 23
    • 0032689169 scopus 로고    scopus 로고
    • et al., Radiation damage effect on avalanche photodiodes, vol. 426, pp. 206-211, 1999.
    • S. Baccaro et al., "Radiation damage effect on avalanche photodiodes," Nucl. Instrum. Meth. A, vol. 426, pp. 206-211, 1999.
    • Nucl. Instrum. Meth. a
    • Baccaro, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.