Wavelength dependence of avalanche photodiode (APD) parameters

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 387, Issue 1-2, 1997, Pages 202-204

  Kirn, Th ^a   Schmitz, D ^a   Schwenke, J ^a   Flugel Th ^b   Renker, D ^b   Wirtz, H P ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CRYSTALS; PASSIVATION; PHOTONS; QUANTUM EFFICIENCY; READOUT SYSTEMS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE; TUNGSTEN COMPOUNDS;

HAMAMATSU AVALANCHE PHOTODIODES (APD); LEAD TUNGSTATE;

PHOTODIODES;

EID: 0031099882     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00990-4     Document Type: Article

References (1)

1. Technical Proposal of CMS Collaboration, CERN/LHCC 94-38, LHCC/P1 (15 December 1994) pp. 49-72.