Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1796-1806

  Eid, El Sayed ^a,b   Chan, Tony Y ^b   Fossum, Eric R ^a,b   Tsai, Richard H ^a,c   Spagnuolo, Robert ^d   Deily, John ^d   Byers Jr , Wheaton B ^e   Peden, Joseph C ^a,e  

^a IEEE   (United States)

^b Photobit Technology Corporation   (United States)

^c Photobit Corp   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

^e SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

Author keywords

Active pixel sensor; CMOS active pixel sensor; CMOS APS; Dark current; Image sensor; Imager; Ionizing radiation; Ionizing radiation induced dark current; Ionizing radiation tolerant CMOS APS; Radiation hard; Radiation tolerant

Indexed keywords

ACTIVE PIXEL SENSORS (APS); RADIATION TOLERANT IMAGING SYSTEMS;

CMOS INTEGRATED CIRCUITS; DOSIMETRY; ELECTRIC CURRENTS; IMAGING SYSTEMS; IONIZING RADIATION; NUMERICAL ANALYSIS; RADIATION DAMAGE;

IMAGE SENSORS;

EID: 0035723326     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983133     Document Type: Conference Paper

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