The Influence of Structural Characteristics on the Response of Silicon Avalanche Photodiodes to Proton Irradiation

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1974-1981

  Becker, Heidi N ^a   Miyahira, Tetsuo F ^a   Johnston, Allan H ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Avalanche photodiodes; Dark current; Depletion region; Ionization damage; Noise; Protons

Indexed keywords

AVALANCHE DIODES; ENERGY GAP; LEAKAGE CURRENTS; LIGHT ABSORPTION; PROTON IRRADIATION; RADIATION DAMAGE; SENSORS; SPURIOUS SIGNAL NOISE;

DARK CURRENTS; DEPLETION REGION; IONIZATION DAMAGE;

PHOTODIODES;

EID: 1242265264     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820731     Document Type: Conference Paper

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