Radiation tolerance of epitaxial silicon detectors at very large proton fluences

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 556, Issue 2, 2006, Pages 451-458

  Lindstrom G ^a   Fretwurst, E ^a   Honniger F ^a   Kramberger, G ^b   Moller Ivens M ^a   Pintilie, I ^c   Schramm, A ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Charge collection efficiency; Depletion voltage; Epitaxial silicon; Radiation damage; Tracking detectors

Indexed keywords

ANNEALING; DIODES; ELECTRIC POTENTIAL; ISOTHERMS; PROTONS; RADIATION DAMAGE; SILICON;

CHARGE COLLECTION EFFICIENCY; DEPLETION VOLTAGE; EPITAXIAL SILICON; TRACKING DETECTORS;

DETECTORS;

EID: 29444435776     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.10.103     Document Type: Article

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