메뉴 건너뛰기




Volumn 51, Issue 6 II, 2004, Pages 3572-3578

Dark current degradation of near infrared avalanche photodiodes from proton irradiation

Author keywords

Avalanche photodiodes; Dark current; Displacement damage; Ge, InGaAs; Protons

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; GERMANIUM; INFRARED RADIATION; IRRADIATION; PROTONS; SIGNAL TO NOISE RATIO;

EID: 11044222875     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839165     Document Type: Conference Paper
Times cited : (34)

References (18)
  • 1
    • 11044238158 scopus 로고
    • Wavelength selection criteria for laser communications
    • Feb. Jan.
    • K. Shaik and K. Hemmati. (1995, Feb.) Wavelength Selection Criteria for Laser Communications. NASA Tech Report. [Online]. Available: http://techreports.jpl.nasa.gov/1995/95-0330.pdf, Jan. 2004
    • (1995) NASA Tech Report.
    • Shaik, K.1    Hemmati, K.2
  • 2
    • 0016069547 scopus 로고
    • Properties of avalanche photodiodes
    • June
    • P. P. Webb, R. J. McIntyre, and J. Conradi, "Properties of avalanche photodiodes," RCA Rev., vol. 35, pp. 234-278, June 1974.
    • (1974) RCA Rev. , vol.35 , pp. 234-278
    • Webb, P.P.1    McIntyre, R.J.2    Conradi, J.3
  • 3
    • 11044220855 scopus 로고    scopus 로고
    • Fundamentals of free space laser communication
    • Pasadena, CA, Sept. 17
    • G. S. Mecherle, Fundamentals of free space laser communication, in Jet Propulsion Laboratory Invited Lecture, Pasadena, CA, Sept. 17, 2003.
    • (2003) Jet Propulsion Laboratory Invited Lecture
    • Mecherle, G.S.1
  • 5
    • 1242265264 scopus 로고    scopus 로고
    • The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation
    • Dec.
    • H. N. Becker, T. F. Miyahira, and A. H. Johnston, "The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation," IEEE Trans. Nucl. Sci., vol. 50, pp. 1974-1981, Dec. 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 1974-1981
    • Becker, H.N.1    Miyahira, T.F.2    Johnston, A.H.3
  • 7
    • 0038382314 scopus 로고    scopus 로고
    • Review of displacement damage effects in silicon devices
    • June
    • J. R. Srour, C. J. Marshall, and P. W. Marshall, "Review of displacement damage effects in silicon devices," IEEE Trans. Nucl. Sci., vol. 50, pp. 653-670, June 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 653-670
    • Srour, J.R.1    Marshall, C.J.2    Marshall, P.W.3
  • 8
    • 0024914776 scopus 로고
    • Proton, neutron, and electron-induced displacement damage in germanium
    • Dec.
    • P. W. Marshall, C. J. Dale, G. P. Summers, and E. A. Wolicki, "Proton, neutron, and electron-induced displacement damage in germanium," IEEE Trans. Nucl. Sci., vol. 36, pp. 1882-1888, Dec. 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.36 , pp. 1882-1888
    • Marshall, P.W.1    Dale, C.J.2    Summers, G.P.3    Wolicki, E.A.4
  • 9
    • 0027844647 scopus 로고
    • Damage correlations in semiconductors exposed to gamma, electron and proton radiations
    • Dec.
    • G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton radiations," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1372-1379
    • Summers, G.P.1    Burke, E.A.2    Shapiro, P.3    Messenger, S.R.4    Walters, R.J.5
  • 10
    • 0018554752 scopus 로고
    • Radiation damage coefficients for silicon depletion regions
    • Dec.
    • J. R. Srour, S. C. Chen, S. Othmer, and R. A. Hartmann, "Radiation damage coefficients for silicon depletion regions," IEEE Trans. Nucl. Sci., vol. 26, pp. 4784-4791, Dec. 1979.
    • (1979) IEEE Trans. Nucl. Sci. , vol.26 , pp. 4784-4791
    • Srour, J.R.1    Chen, S.C.2    Othmer, S.3    Hartmann, R.A.4
  • 11
    • 0026818394 scopus 로고
    • A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction
    • Feb.
    • Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, "A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction," J. Lightwave Technol., vol. 10, pp. 182-193, Feb. 1992.
    • (1992) J. Lightwave Technol. , vol.10 , pp. 182-193
    • Liu, Y.1    Forrest, S.R.2    Hladky, J.3    Lange, M.J.4    Olsen, G.H.5    Ackley, D.E.6
  • 12
    • 0024107633 scopus 로고
    • Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 um wavelength optical communication use
    • Nov.
    • K. Taguchi, T. Korikai, Y. Sugimoto, K. Makita, and H. Ishihara, "Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 um wavelength optical communication use," J. Lightwave Technol., vol. 6, pp. 1643-1655, Nov. 1988.
    • (1988) J. Lightwave Technol. , vol.6 , pp. 1643-1655
    • Taguchi, K.1    Korikai, T.2    Sugimoto, Y.3    Makita, K.4    Ishihara, H.5
  • 13
    • 1242265504 scopus 로고    scopus 로고
    • Heavy-ion induced single-event transients in high-speed InP-InGaAs avalanche photodiodes
    • Dec.
    • J. S. Laird, T. Hirao, S. Onoda, H. Ohyama, and T. Kamiya, "Heavy-ion induced single-event transients in high-speed InP-InGaAs avalanche photodiodes," IEEE Trans. Nucl. Sci., vol. 50, pp. 2225-2232, Dec. 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 2225-2232
    • Laird, J.S.1    Hirao, T.2    Onoda, S.3    Ohyama, H.4    Kamiya, T.5
  • 14
    • 0036957349 scopus 로고    scopus 로고
    • Consistency of bulk damage factor and KIEL for electrons, protons, and heavy ions in Si CCDs
    • Dec.
    • S. Kuboyama, H. Sindou, T. Hirao, and S. Matsuda, "Consistency of bulk damage factor and KIEL for electrons, protons, and heavy ions in Si CCDs," IEEE Trans. Nucl. Sci., vol. 49, pp. 2684-2689, Dec. 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 2684-2689
    • Kuboyama, S.1    Sindou, H.2    Hirao, T.3    Matsuda, S.4
  • 15
    • 1242309535 scopus 로고
    • Electron and proton damage coefficients in low-resistivity silicon
    • Dec.
    • J. R. Srour, S. Othmer, and K. Y. Chiu, "Electron and proton damage coefficients in low-resistivity silicon," IEEE Trans. Nucl. Sci., vol. NS-22, pp. 2656-2662, Dec. 1975.
    • (1975) IEEE Trans. Nucl. Sci. , vol.NS-22 , pp. 2656-2662
    • Srour, J.R.1    Othmer, S.2    Chiu, K.Y.3
  • 16
    • 11044226292 scopus 로고    scopus 로고
    • Avalanche photodetectors for 10 Gb/s fiber optic receivers
    • April
    • K. K. Loi and M. Itzler, "Avalanche photodetectors for 10 Gb/s fiber optic receivers," Compound Semicond., vol. 6, no. 3, pp. 1-3, April 2000.
    • (2000) Compound Semicond. , vol.6 , Issue.3 , pp. 1-3
    • Loi, K.K.1    Itzler, M.2
  • 17
    • 0000924408 scopus 로고    scopus 로고
    • Single-photon detection beyond 1 μm: Performance of commercially available InGaAs/InP detectors
    • June
    • A. Lacaita, F. Zappa, S. Cova, and P. Lovati, "Single-photon detection beyond 1 μm: performance of commercially available InGaAs/InP detectors," Appl. Opt., vol. 35, no. 1, pp. 2986-2996, June 1996.
    • (1996) Appl. Opt. , vol.35 , Issue.1 , pp. 2986-2996
    • Lacaita, A.1    Zappa, F.2    Cova, S.3    Lovati, P.4
  • 18
    • 0024664123 scopus 로고
    • Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes
    • May
    • J. C. Campbell, B. C. Johnson, G. J. Qua, and W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes," J. Lightwave Technol., vol. 7, pp. 778-784, May 1989.
    • (1989) J. Lightwave Technol. , vol.7 , pp. 778-784
    • Campbell, J.C.1    Johnson, B.C.2    Qua, G.J.3    Tsang, W.T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.