Bias dependence and bistability of radiation defects in silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 466, Issue 2, 2001, Pages 345-353

  Mikuz M ^a   Cindro, V ^a   Kramberger, G ^a   Ontar, D ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Annealing; Bias; Bistability; Large madron collider; Neutrons; Pions; Radiation damage; Silicon detector

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COLLIDING BEAM ACCELERATORS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON SENSORS;

BIAS-INDUCED DAMAGES; LARGE MADRON COLLIDERS;

NEUTRON DETECTORS;

EID: 0035398656     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00584-8     Document Type: Conference Paper

References (9)

1. Characterization of neutron flux in the exposure channel F19 of the TRIGA Mark II Reactor in Ljubljana
2. Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation