Characterization of neutral beam source based on pulsed inductively coupled discharge: Time evolution of ion fluxes entering neutralizer

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 1, 2007, Pages 134-140

  Abolmasov, Sergey N ^a   Ozaki, Takuya ^a   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; INDUCTIVELY COUPLED PLASMA; MAGNETIC DEVICES; NEGATIVE IONS; OPTICAL RESOLVING POWER; VACUUM TECHNOLOGY;

NEUTRAL BEAM SOURCES; PLASMA SHEATH; ULTRALARGE-SCALE INTEGRATED DEVICES;

ION BEAMS;

EID: 33846238184     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2402154     Document Type: Article

References (36)

1. T. Yunogami, T. Mizutani, K. Suzuki, and S. Nishimatsu, Jpn. J. Appl. Phys., Part 1 28, 2172 (1989).
2. J. P. McVittie, Proceedings of the 1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, 1996, p. 7.
3. J. L. Lauer, J. L. Shohet, and R. W. Hansen, J. Vac. Sci. Technol. A 21, 1253 (2003).
4. Y. Ishikawa, M. Okigawa, S. Samukawa, and S. Yamasaki, J. Vac. Sci. Technol. B 23, 389 (2005).
5. X. Tang, Q. Wang, and D. M. Manos, J. Vac. Sci. Technol. B 18, 1262 (2000).
6. D. Lee, M. Chung, S. Park, and G. Yeom, Jpn. J. Appl. Phys., Part 2 41, L1412 (2002).
7. M. W. Geis, N. N. Efremow, S. W. Pang, and A. C. Anderson, J. Vac. Sci. Technol. B 5, 363 (1987).
8. K. Suzuki, S. Hiraoka, and S. Nishimatsu, J. Appl. Phys. 64, 3697 (1988).
9. J. W. Cuthbertson, R. W. Motley, and W. D. Langer, Rev. Sci. Instrum. 63, 5297 (1992).
10. K. P. Giapis, T. A. Moore, and T. K. Minton, J. Vac. Sci. Technol. A 13, 959 (1995).
11. M. J. Goeckner, T. K. Bennett, and S. A. Cohen, Appl. Phys. Lett. 71, 980 (1997).
12. D. H. Lee, J. W. Bae, S. D. Park, and G. Y. Yeom, Thin Solid Films 398-399, 647 (2001).
13. S. Panda, D. J. Economou, and L. Chen, J. Vac. Sci. Technol. A 19, 398 (2001).
14. S. Samukawa, K. Sakamoto, and K. Ichiki, Jpn. J. Appl. Phys., Part 2 40, L997 (2001).
15. S. Noda, H. Nishimori, T. Ida, T. Arikado, K. Ichiki, T. Ozaki, and S. Samukawa, J. Vac. Sci. Technol. A 22, 1506 (2004).
16. T. Kubota, T. Baba, S. Samukawa, H. Kawashima, Y. Uraoka, T. Fuyuki, and I. Yamashita, Appl. Phys. Lett. 84, 1555 (2004).
17. S. Noda, Y. Hoshino, T. Ozaki, and S. Samukawa, J. Vac. Sci. Technol. B 23, 2063 (2005).
18. D. Smith and I. C. Plumb, J. Phys. D 6, 1431 (1973).
19. L. J. Overzet, Y. Lin, and L. Luo, J. Appl. Phys. 72, 5579 (1992).
20. L. J. Overzet, B. A. Smith, J. Kleber, and S. K. Kanakasabapathy, Jpn. J. Appl. Phys., Part 1 36, 2443 (1997).
21. S. K. Kanakasabapathy, L. J. Overzet, V. Midha, and D. Economou, Appl. Phys. Lett. 78, 22 (2001).
22. S. G. Walton, D. Leonhardt, R. F. Fernsler, and R. A. Meger, Appl. Phys. Lett. 81, 987 (2002).
23. S. G. Walton, D. Leonhardt, D. D. Blackwell, R. F. Fernsler, P. D. Murphy, and R. A. Meger, Phys. Rev. 65, 046412 (2002).
24. A. A. Howling, L. Sansonnens, J. L. Dorier, and Ch. Hollenstein, J. Appl. Phys. 75, 1340 (1994).
25. S. Samukawa, K. Sakamoto, and K. Ichiki, J. Vac. Sci. Technol. A 20, 1566 (2002).
26. T. H. Ahn, K. Nakamura, and H. Sugai, Plasma Sources Sci. Technol. 5, 139 (1996).
27. G. A. Hebner and C. B. Fleddermann, J. Appl. Phys. 82, 2814 (1997).
28. S. Ashida, M. R. Shim, and M. A. Lieberman, J. Vac. Sci. Technol. A 14, 391 (1996).
29. M. V. Malyshev, V. M. Donnelly, J. I. Colonell, and S. Samukawa, J. Appl. Phys. 86, 4813 (1999).
30. V. Midha and D. J. Economou, Plasma Sources Sci. Technol. 9, 256 (2000).
31. A. Maresca, K. Orlov, and U. Kortshagen, Phys. Rev. E 65, 056405 (2002).
32. I. D. Kaganovich, B. N. Ramamurthi, and D. J. Economou, Phys. Rev. E 64, 036402 (2001).
33. D. Smith, A. G. Dean, and N. G. Adams, J. Phys. D 7, 1944 (1974).
34. A. A. Kudryavtsev, Tech. Phys. Lett. 22, 693 (1996).
35. R. A. Gottscho, Phys. Rev. 36, 2233 (1987).
36. R. S. Hemsworth and T. Inoue, IEEE Trans. Plasma Sci. 33, 1799 (2005).