Electrical and thermal stability characteristics of HfCN films as metal gate-electrode synthesized by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Wang, Wenwu ^a   Nabatame, Toshihide ^b   Haneji, Nobuo ^c   Shimogaki, Yukihiro ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Effective work function; Hafnium carbonitride; Metal gate electrode; Thermal stability

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICA; THERMODYNAMIC STABILITY;

EFFECTIVE WORK FUNCTION; HAFNIUM CARBONITRIDE; METAL GATE ELECTRODE;

THIN FILMS;

EID: 30344462685     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1019     Document Type: Article

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