Diffusion and incorporation of Zr into thermally grown SiO 2 on Si(1 0 0)

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 223-227

  Yamaoka, Masanori ^a   Murakami, Hideki ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Defect state density; Diffusion; High k gate dielectrics; Photoelectron yield spectroscopy; X ray photoelectron spectroscopy; Zr silicate

Indexed keywords

CHEMICAL BONDS; DIELECTRIC MATERIALS; DIFFUSION; GATES (TRANSISTOR); GROWTH (MATERIALS); PHOTOEMISSION; SILICA; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON YIELD SPECTROSCOPY;

ZIRCONIUM;

EID: 0038007891     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00428-8     Document Type: Conference Paper

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