Al-oxynitrides as a buffer layer for Pr2O3/SiC interfaces

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 945-948

  Sohal, Rakesh ^a   Torche, Mohamed ^a   Henkel, Karsten ^a   Hoffmann, Patrick ^a   Tallarida, Massimo ^a   Schmeißer, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Aluminum nitride; High k dielectric; Praseodymium oxide; SR PES

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; DIFFUSION; ENERGY GAP; INTERFACES (MATERIALS); PRASEODYMIUM COMPOUNDS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

BUFFER LAYERS; DIFFUSION BARRIER; HIGH-K DIELECTRIC; PRASEODYMIUM OXIDES;

ALUMINUM NITRIDE;

EID: 33846196154     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.047     Document Type: Article

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