Pr-O-N dielectrics for MIS stacks on silicon and silicon carbide surfaces

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 353-358

  Henkel, Karsten ^a   Torche, Mohamed ^a   Sohal, Rakesh ^a   Schwiertz, Carola ^a   Hoffmann, Patrick ^a   Schmeißer, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); MIS DEVICES; PERMITTIVITY; SILICON CARBIDE; SUBSTRATES;

BAND ALIGNMENT; EQUIVALENT OXIDE THICKNESS (EOT); INTERFACE STATE DENSITY; INTERFACIAL LAYERS;

DIELECTRIC MATERIALS;

EID: 33750378138     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b10-11     Document Type: Conference Paper

References (17)

1. J.C. Zolper, and M Skowronski: MRS Bull. 30, 273 (2005).
2. E. Zschech et al.: Advances in Solid State Physics 45, 375 (2005).
3. M. Torche, K. Henkel, and D. Schmeißer: Mater. Sci. Eng. C (2006) in press.
4. A. Goryachko et al.: Phys. Status Solidi C 1 (2), 265 (2004).
5. D. Schmeißer, H.-J. Müssig, and J. Dabrowski: Appl. Phys. Lett. 85 (1), 88 (2004).
6. J. Robertson: J. Non-Cryst. Solids 303, 94 (2002)
7. K. Kukli et al.: Chem. Mater. 16, 5162 (2004).
8. D. Schmeißer, H.-J. Müssig: J. Phys.-Condens. Mat. 16, S153 (2004).
9. V.V. Afanas'ev et al.: Appl. Phys. Lett. 82 (6) 922 (2003).
10. C. Ance et al.: Appl. Phys. Lett. 60 (11), 1399 (1992).
11. D.M. Brown et al.: J. Electrochem. Soc. 115 (1968) 311
12. H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida: J. Appl. Phys. 50, 896 (1979).
13. A.T. Collins, B.C. Lightowlers, and P.J. Dean: Phys. Rev. 158 (3), 833 (1967)
14. A. Goryachko et al.: Phys. Status Solidi A 201, 245 (2004).
15. P. Hoffmann, and D. Schmeißer: Nucl. Instrum. Meth. B 246 (1), 85 (2006) in press.
16. P. Hoffmann, R.P. Mikalo, and D. Schmeißer, J. Non-Cryst. Solids 303 (1), 6 (2002).
17. E.H. Nicollian, and A. Goetzberger: Bell Syst. Tech. J. 46, 1055 (1967).