Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3064-3069

  Lu, Chia Yu ^a   Lin, Horng Chih ^a   Chang, Yi Feng ^a   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Compressive strain; Negative bias temperature instability (NBTI); SiN capping

Indexed keywords

CMOS INTEGRATED CIRCUITS; SATURATION (MATERIALS COMPOSITION); SILICON NITRIDE; STRAIN; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

COMPRESSIVE STRAIN; HIGH TEMPERATURE STRESS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); SIN CAPPING;

MOSFET DEVICES;

EID: 33646897916     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3064     Document Type: Article

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