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Volumn , Issue , 2000, Pages 468-471
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Direct comparison of electrical performance of 0.1-μm pMOSFETs doped by Plasma Doping or low energy ion implantation
a a b b c c c c
a
ORANGE LABS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
ADVANCED CMOS;
DEVICE PERFORMANCE;
ELECTRICAL PERFORMANCE;
IMPLANTATION TECHNIQUE;
JUNCTION DEPTH;
LATERAL SPREAD;
LOW ENERGY ION IMPLANTATION;
P-MOSFETS;
PLASMA DOPING;
SOURCE/DRAIN EXTENSION;
SUBMICROMETERS;
ULTRA SHALLOW JUNCTION;
CMOS INTEGRATED CIRCUITS;
MOSFET DEVICES;
SEMICONDUCTOR DOPING;
ION IMPLANTATION;
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EID: 2142737101
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/.2000.924189 Document Type: Conference Paper |
Times cited : (16)
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References (10)
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