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Volumn , Issue , 2000, Pages 468-471

Direct comparison of electrical performance of 0.1-μm pMOSFETs doped by Plasma Doping or low energy ion implantation

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; DEVICE PERFORMANCE; ELECTRICAL PERFORMANCE; IMPLANTATION TECHNIQUE; JUNCTION DEPTH; LATERAL SPREAD; LOW ENERGY ION IMPLANTATION; P-MOSFETS; PLASMA DOPING; SOURCE/DRAIN EXTENSION; SUBMICROMETERS; ULTRA SHALLOW JUNCTION;

EID: 2142737101     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924189     Document Type: Conference Paper
Times cited : (16)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.