Overview of the prospects of ultra-rapid thermal process for advanced CMOSFETs

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 18-21

  Suguro, Kyoichi ^a   Ito, Takayuki ^a   Matsuo, Kouji ^a   Iinuma, Toshihiko ^a   Nishinohara, Kazumi T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CRACKS; LEAKAGE CURRENTS; OPTIMIZATION; PROBLEM SOLVING; RADIATION EFFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

CRYSTAL DAMAGE DENSITY; RADIATION ENERGY; ULTRA-SHORT TIME HEATING;

MOSFET DEVICES;

EID: 3543056940     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (11)

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8. K. Suguro, T. Ito, T. Itani and T. Iinuma, Mater. Res. Soc. Spring 2003 Meeting, paper D5.2.
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