Decaborane (B10H14) ion implantation technology for sub-0.1-yum PMOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 683-689

  Goto, Ken Ichi ^a,b   Matsuo, Jiro ^a   Tada, Yoko ^a   Sugii, Toshihiro ^a   Yamada, Isao ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Boron; Decaborane; Implantation

Indexed keywords

ATOMS; DIFFUSION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT MANUFACTURE; MOLECULES; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON;

DECABORANE; EFFECTIVE ACCELERATION ENERGY; TRANSIENT ENHANCED DIFFUSION;

ION IMPLANTATION;

EID: 0032654661     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753701     Document Type: Article

References (13)

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