Laser thermal processing for ultra shallow junction formation: Numerical simulation and comparison with experiments

Applied Surface Science

Volumn 208-209, Issue 1, 2003, Pages 345-351

  Hernandez, M ^a   Venturini, J ^a   Zahorski, D ^a   Boulmer, J ^b   Debarre D ^b   Kerrien, G ^b   Sarnet, T ^b   Laviron, C ^c   Semeria, M N ^c   Camel, D ^c   Santailler, J L ^c  

^a SOPRA   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c CEA GRENOBLE   (France)

Author keywords

Laser annealing; Laser thermal processing; Thermal simulation; Ultra shallow junction

Indexed keywords

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; ELECTRIC RESISTANCE; LASER BEAM EFFECTS; SEMICONDUCTOR MATERIALS; ELECTROMAGNETIC WAVE REFLECTION; EXCIMER LASERS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; XENON;

LASER THERMAL PROCESSING; LASER THERMAL PROCESSING (LTP);

EXCIMER LASERS; SEMICONDUCTOR JUNCTIONS;

EID: 0037443226     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01395-8     Document Type: Conference Paper

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