Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 992-994

  Lu, Xinming ^a   Shao, Lin ^a   Wang, Xuemei ^a   Liu, Jiarui ^a   Chu, Wei Kan ^a   Bennett, Joe ^b   Larson, Larry ^b   Ling, Peiching ^c  

^a University of Houston   (United States)

^b SEMATECH   (United States)

^c Adv Materials Engineering Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BORON; DIFFUSION; FREE ENERGY; HEAVY IONS; ION IMPLANTATION; ION SOURCES; NEGATIVE IONS; POINT DEFECTS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SPUTTERING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CLUSTER-ION IMPLANTATION; ULTRASHALLOW JUNCTIONS;

SILICON WAFERS;

EID: 0035998535     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1479361     Document Type: Conference Paper

References (18)