Dopant channeling as a function of implant angle for low energy applications

Proceedings of the International Conference on Ion Implantation Technology

Volumn 1, Issue , 1999, Pages 126-129

  Walther, S R ^a   Mehta, S ^a   Weeman, J ^a   Grouillet, A ^a   Brown, D ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ION BEAM CHANNELING;

SEMICONDUCTOR JUNCTIONS;

EID: 0033323589     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)