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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2001, Pages 6187-6191

Oxidative curing of hydrogen silsesquioxane resin films by electron beam irradiation without additional heatings and characterization of the cured films

(4) Shin, Yu Gyun a Lee, Jeong Yong a Park, Moon Han b Kang, Ho Kyu b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

Crack free thickness; Densification; Electron beam; Hydrogen silsesquioxane (HSQ); Interlayer dielectric; Refractive index (RI); SiH group; Silicon oxide; Stress; Thermal stability

Indexed keywords

ANNEALING; CRACKS; DIELECTRIC MATERIALS; ELECTRON BEAMS; ELECTRON IRRADIATION; MECHANICAL PROPERTIES; NITROGEN; REACTION KINETICS; REFRACTIVE INDEX; RESINS; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

CRACKING RESISTANCE; ELECTRON BEAM IRRADIATION; HYDROGEN SILSESQUIOXANE; INTERLAYER DIELECTRICS; NITROGEN ANNEALING; OXIDATIVE CURING; SILICON OXIDE;

CURING;

EID: 0036147011 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.