Exposure dose effects on the reaction-diffusion process in model extreme ultraviolet photoresists

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 3044-3047

  Lavery, Kristopher A ^a   Vogt, Bryan D ^a   Prabhu, Vivek M ^a   Lin, Eric K ^a   Wu, Wen Li ^a   Satija, Sushil K ^a   Choi, Kwang Woo ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME ULTRAVIOLET (EUV); NEUTRON REFLECTOMETRY; PHOTOACIDS; QUANTITATIVE MODELS;

CONCENTRATION (PROCESS); DIFFUSION; LITHOGRAPHY; PHOTORESISTORS;

DOSIMETRY;

EID: 33845237633     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2375086     Document Type: Article

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