Fundamentals of the reaction-diffusion process in model EUV photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Lavery, Kristopher A ^a   Choi, Kwang Woo ^b   Vogt, Bryan D ^a   Prabhu, Vivek M ^a   Lin, Eric K ^a   Wu, Wen Li ^a   Satija, Sushil K ^a   Leeson, Michael J ^b   Cao, Heidi B ^b   Thompson, George ^b   Deng, Hai ^b   Fryer, David S ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Chemically amplified photoresists; Diffusion; Photolithography

Indexed keywords

CHEMICALLY AMPLIFIED PHOTORESISTS; CRITICAL DIMENSIONS (CD); DEPROTECTION; LINE WIDTH ROUGHNESS (LWR);

DIFFUSION; NANOSTRUCTURED MATERIALS; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY; POLYMERS; ULTRAVIOLET RADIATION;

PHOTORESISTS;

EID: 33745630372     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656831     Document Type: Conference Paper

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