Mechanical stress evolution in metal interconnects for various line aspect ratios and passivation dielectrics

Microelectronic Engineering

Volumn 69, Issue 1, 2003, Pages 26-36

  Park, Young Bae ^a   Jeon, In Su ^b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Aspect ratio; Keyholes; Metal interconnect; Passivation dielectrics; Thermal stress

Indexed keywords

ASPECT RATIO; FINITE ELEMENT METHOD; PASSIVATION; THERMAL STRESS; X RAY DIFFRACTION;

METAL INTERCONNECTS;

MICROELECTRONICS;

EID: 0042347446     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00226-0     Document Type: Article

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