Reactive ion etch-induced effects on the near-band-edge luminescence in GaN

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3185-3187

  Cheung, R ^a   Withanage, S ^a   Reeves, R J ^a   Brown, S A ^a   Ben Yaacov, I ^a   Kirchner, C ^b   Kamp, M ^b  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EMISSION SPECTROSCOPY; EXCITONS; NITRIDES; PHOTOLUMINESCENCE; PLASMA ETCHING; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; SULFUR COMPOUNDS; THERMAL EFFECTS;

GALLIUM NITRIDE; SULFUR HEXAFLUORIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032614580     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124101     Document Type: Article

References (20)

1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, Berlin, 1997).
2. Q. Chen, M. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman, Electron. Lett. 33, 637 (1997).
3. C. Youtsey, I. Adesida, and G. Bulman, Appl. Phys. Lett. 71, 2151 (1997).
4. R. J. Shul, G. B. McClellan, S. J. Pearton, C. R. Abernathy, C. Constantine, and C. Barrat, Electron. Lett. 32, 1408 (1996).
5. D. Basak, M. Verdu, M. T. Montojo, M. A. Sanchez-Garcia, F. J. Sanchez, E. Munoz, and E. Callej, Semicond. Sci. Technol. 12, 1654 (1997).
6. E. Hu, C.-H. Chen, and D. L. Green, J. Vac. Sci. Technol. B 14, 3632 (1996).
7. M. Rahman, J. Appl. Phys. 82, 2215 (1997).
8. W. V. Schoenfeld, C.-H. Chen, P. M. Petroff, and E. L. Hu Appl. Phys. Lett, 73, 2935 (1998).
9. O. J. Glembocki, J. A. Tuchman, J. A. Dagata, K. K. Ko, S. W. Pang, and C. E. Stutz, Appl. Phys. Lett. 73, 114 (1998).
10. S. J. Pearton, J. W. Lee, J. D. MacKenzie, C. R. Abernathy, and R. J. Shul, Appl. Phys. Lett. 67, 2329 (1995).
11. G. Yu, G. Wang, H. Ishikawa, H. Umeno, M. Soga, T. Egawa, J. Watanabe, and T. Jimbo, Appl. Phys. Lett. 70, 3209 (1997).
12. B. Santic, C. Merz, U. Kaufmann, R. Niebuhr, H. Obloh, and K. Bachem, Appl. Phys. Lett. 71, 1837 (1997).
13. C. Merz, M. Kunzer, U. Kaufmann, I. Akasaki, and H. Amano, Semicond. Sci. Technol. 11, 712 (1996).
14. K. Pakula, A. Wysmolek, K. P. Korona, J. M. Baranowski, R. Stepniewski, I. Grzegory, M. Bockowski, J. Jun, S. Krukowski, M. Wroblewski, and S. Porowski, Solid State Commun. 97, 919 (1996).
15. J. W. Orton and C. T. Foxon, Rep. Prog. Phys. 61, 1 (1998).
16. Y. P. Varshni, Physica 34, 149 (1967).
17. K. P. Korona, A. Wysmolek, K. Pakula, R. Stepniewski, J. M. Baranowski, I. Grzegory, B. Lucznik, M. Wroblewski, and S. Porowski, Appl. Phys. Lett. 69, 788 (1996).
18. B. Monemar, J. P. Bergman, and I. A. Buyanova, GaN and Related Materials, edited by S. J. Pearton (Gordon and Breach Science, Amsterdam, 1997), Chap. 4.
19. G.-C. Yi and B. W. Wessels, Appl. Phys. Lett. 69, 3028 (1996).
20. T. L. Tansley, E. M. Goldys, M. Godlewski, B. Zhou, and H. Y. Zuo, GaN and Related Materials, edited by S. J. Pearton (Gordon and Breach Science, Amsterdam, 1997). Chap. 8.