Characteristics of BCl3 plasma-etched GaN Schottky diodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4, 2002, Pages

  Nakaji, Masaharu ^a   Egawa, Takashi ^a   Ishikawa, Hiroyasu ^a   Arulkumaran, Subramanian ^a   Jimbo, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Plasma damage; RIE; Schottky diode; XPS

Indexed keywords

BORON COMPOUNDS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; REACTIVE ION ETCHING; SURFACE PROPERTIES; SURFACE TREATMENT; THERMIONIC EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON TRICHLORIDE; PLASMA-INDUCED DAMAGE;

SCHOTTKY BARRIER DIODES;

EID: 0037089108     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l493     Document Type: Letter

References (11)