Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2277-2281

  Cho, Hyun ^a   Vartuli, C B ^a   Abernathy, C R ^a   Donovan, S M ^a   Pearton, S J ^a   Shul, R J ^b   Han, J ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHLORINE; DRY ETCHING; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR PLASMAS;

INDUCTIVELY COUPLED PLASMAS (ICP);

SEMICONDUCTING FILMS;

EID: 0032304727     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00225-1     Document Type: Article

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