Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 6, 2006, Pages 2061-2069

  Amassian, A ^a,b   Svec, M ^a,c   Desjardins, P ^a   Martinu, L ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b Cornell University   (United States)

^c J E PURKINJE UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE BROADENING; ION MIXING; RADIO-FREQUENCY (RF)-BIASED ELECTRODES; REAL-TIME SPECTROSCOPIC ELLIPSOMETRY (RTSE);

COMPUTER SIMULATION; ELECTRODES; ELLIPSOMETRY; FILM GROWTH; INTERFACES (MATERIALS); ION BOMBARDMENT; MONTE CARLO METHODS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 33750947317     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348642     Document Type: Article

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